http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050059939-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f1cdac90c4272d2ed510122d7153738 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 2003-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_461fda2f899e6b2d49b4504b178644ae |
| publicationDate | 2005-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050059939-A |
| titleOfInvention | Method of manufacturing a semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device. In order to prevent voids from being generated due to an insulation undercut at the lower edge of the upper metal layer patterned in a metal-insulator-metal (MIM) structure, gap fill is performed. After removing the voids by forming the Fox having excellent characteristics, the interlayer insulating film is formed on the whole to prevent leakage current from being generated by the voids, thereby improving process reliability and device electrical characteristics. |
| priorityDate | 2003-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.