Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-16 |
filingDate |
2004-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6795e57cd368710a1bf2aa09ff09964f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac2291561c8fdce65aba93cbe134e729 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2905c27ff866b123a52dc8cb211382c |
publicationDate |
2005-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20050059420-A |
titleOfInvention |
Slurry compositions, and fabrication method of semiconductor device including cmp(chemical mechanical polishing) process using the same |
abstract |
An exemplary embodiment of the present invention provides a new slurry composition that can be used in a process involving chemical mechanical polishing of a polysilicon layer. The slurry composition may comprise one or more nonionic polymers capable of selectively forming a passivation layer on the exposed polysilicon surface to reduce polysilicon removal rates and to improve the flatness of the polished surface for silicon oxide and silicon nitride. Surfactants. Typical surfactants include alkyl and aryl alcohols consisting of ethylene oxide (EO) -propylene oxide (PO) block polymers, which may be effective in smaller amounts but present in slurry compositions in amounts up to 5 Wt%. Other slurry additives include viscosity modifiers, pH adjusters, dispersants, chelating agents, and amine or imine surfactants to control the relative removal rates of silicon nitride and silicon oxide. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100684877-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100793240-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100750191-B1 |
priorityDate |
2003-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |