| abstract |
The probe method of this invention is equipped with the process of reducing the electrode of the wafer W using a forming gas, and the process of contacting an electrode and probe pin 14A in a dry atmosphere. Further, before the reduction treatment of the electrode P of the inspected object, the inspected object is heated in an inert gas atmosphere, and the reducing treatment is performed by contacting the reducing gas with the electrode of the inspected object under normal pressure. . |