| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f1cdac90c4272d2ed510122d7153738 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2003-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f358e56dd9a5f22f613d9ba67681dcd |
| publicationDate |
2005-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20050056383-A |
| titleOfInvention |
Method of forming a metal wiring in a semiconductor device |
| abstract |
The present invention relates to a method for forming a metal wiring of a semiconductor device, wherein the seed layer is formed thinner on the sidewall than the bottom of the trench, and then the seed layer of the trench sidewall is removed by etching to leave the seed layer only on the bottom of the trench. By filling the trench with a metal material by the electroplating method, plating may be performed in the vertical direction only at the bottom of the trench to prevent the metal plating layer from protruding from a specific portion and to easily perform or omit the subsequent CMP process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7994041-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010059857-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010059857-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7879720-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8293647-B2 |
| priorityDate |
2003-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |