http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050056381-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f1cdac90c4272d2ed510122d7153738 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F17-0013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F41-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 |
| filingDate | 2003-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecafacde1b3d112c6ad0dff8c2028156 |
| publicationDate | 2005-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050056381-A |
| titleOfInvention | Method of forming a inductor in a semiconductor device |
| abstract | The present invention relates to a method of forming an inductor of a semiconductor device, and the idea of the present invention is to form an insulating film on a semiconductor substrate having a predetermined structure, to form a trench by patterning the insulating film, and to form a diffusion barrier layer on the resultant trench And forming an activation binder layer, performing a plasma treatment process on the entire surface of the resultant, so that the activation complex layer remains only inside the trench, and performing an electroplating process on the entire surface of the resultant to form a plating layer in the trench. And performing a planarization process until the resulting interlayer insulating film is exposed. |
| priorityDate | 2003-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.