| abstract |
The present invention relates to a thin film manufacturing method using the ultraviolet atomic layer deposition method at a low temperature, injecting a gas of the first reactant in the form of a pulse into the chamber loaded with the substrate to chemically adsorb the first reactant on the surface of the substrate and then inert into the chamber The gas is injected in the form of a pulse to purge first, and then the gas of the second reactant is injected in the form of a pulse into the chamber while irradiating ultraviolet rays onto the substrate, followed by chemical adsorption on the first reactant and reacting with the inert gas. It purges to form a thin film of atomic layer units. According to the present invention, by irradiating ultraviolet light in the atomic layer deposition process to promote the chemical reaction of atomic layer formation to increase the deposition rate at a lower temperature than the conventional atomic layer deposition process, step coverage, film uniformity and substrate surface and thin film By increasing the bonding force between the high-quality nano-thick thin film can be produced, it can bring about the time and cost savings of the thin film manufacturing process. |