http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050053255-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate | 2003-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d66f86e3dd6fe3248d801759c33aaa2c |
| publicationDate | 2005-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050053255-A |
| titleOfInvention | Phase-changable memory device and method of forming the same |
| abstract | Disclosed are a phase change memory device and a method of forming the same, which can minimize an operation error. This phase change memory element is formed as follows. First, a plurality of lower electrode contacts electrically connected to the semiconductor substrate are formed through the interlayer insulating layer on the semiconductor substrate. A plurality of lower electrodes overlapping the plurality of lower electrode contacts are formed on the interlayer insulating layer. A phase conversion film, an upper electrode film, and an insulating film are sequentially stacked on the semiconductor substrate on which the lower electrodes are formed. Anisotropic etching is performed to etch the insulating film, the upper low electrode film, and the phase change element film to expose the interlayer insulating film between the lower electrodes. In this case, the phase conversion film, the upper electrode film and the insulating film are thickly stacked on the lower electrode, and thinly stacked on the sidewall of the lower electrode. The front anisotropic etching is performed such that the top and side surfaces of the lower electrodes are covered by at least the phase change film and the upper electrode film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7582568-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009073188-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009073188-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100889970-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100713809-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7667221-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100744273-B1 |
| priorityDate | 2003-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.