http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050052630-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2003-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f49e133c588f6db8b2d9d3eede3f0fc |
| publicationDate | 2005-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050052630-A |
| titleOfInvention | Method for forming metal contact of semiconductor device |
| abstract | The present invention discloses a method for forming a metal contact of a semiconductor device. The disclosed metal contact forming method includes providing a silicon substrate on which a tungsten bit line is formed, forming an interlayer insulating film on the entire surface of the substrate to cover the tungsten bit line, and etching the tungsten bit to etch the tungsten bit. Forming a contact hole exposing the line, depositing a first tungsten film for the barrier according to an ionized metal plasma (IMP) method on the interlayer insulating film including the contact hole surface, and contacting the contact on the first tungsten film Depositing a second tungsten film according to a CVD method to fill a hole; and etching back the second tungsten film to expose the substrate. According to the present invention, by depositing the first tungsten film for the barrier thinly according to the IMP method without the formation of the barrier metal of TiN, and depositing the second tungsten film for contact filling according to the CVD method, during the CVD tungsten deposition, Contact buried defects can be prevented from occurring due to the explosion phenomenon at the bottom, thereby preventing the occurrence of metal contact defects, thereby improving device reliability and yield. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102008006919-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100876976-B1 |
| priorityDate | 2003-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.