Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02148 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02159 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
filingDate |
2003-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38a0c9ce50c577a7f4c11a04f7ea0637 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17175ae5d3d6ebe7e2e2735035e276a0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58a9fcb2e7b4a94368f2b58ea72eece5 |
publicationDate |
2005-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20050050003-A |
titleOfInvention |
Method of forming a dielectric layer incorporating carbon impurities using an atomic layer deposition technique |
abstract |
A method of forming a dielectric film containing carbon impurities using an atomic layer deposition technique is disclosed. This method includes preparing a semiconductor substrate. The semiconductor substrate is loaded into the reactor. Thereafter, the basic cycle for continuously injecting and purging the metal organic raw material gas and the injecting and discharging the oxidant gas and the injecting and discharging the metal organic raw material gas are carried out. A method of forming a dielectric film comprising performing at least one additional cycle (continuous cycle) to be performed continuously. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100716654-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7704867-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10573701-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8970014-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8557713-B2 |
priorityDate |
2003-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |