http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050050003-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
filingDate 2003-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38a0c9ce50c577a7f4c11a04f7ea0637
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publicationDate 2005-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20050050003-A
titleOfInvention Method of forming a dielectric layer incorporating carbon impurities using an atomic layer deposition technique
abstract A method of forming a dielectric film containing carbon impurities using an atomic layer deposition technique is disclosed. This method includes preparing a semiconductor substrate. The semiconductor substrate is loaded into the reactor. Thereafter, the basic cycle for continuously injecting and purging the metal organic raw material gas and the injecting and discharging the oxidant gas and the injecting and discharging the metal organic raw material gas are carried out. A method of forming a dielectric film comprising performing at least one additional cycle (continuous cycle) to be performed continuously.
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priorityDate 2003-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.