http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050047648-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f1cdac90c4272d2ed510122d7153738 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2858 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2853 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-28 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 2003-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8ca0200d8449f2b4dd2418849502d91 |
| publicationDate | 2005-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050047648-A |
| titleOfInvention | For test pattern for reliability measurement of copper interconnect line having moisture window and method of manufacturing the same |
| abstract | The present invention forms a window through which moisture can penetrate into the interlayer insulating film to enable the inflow of moisture during the EM test, and to measure the EM measurement conditions in more severe conditions than the actual measurement conditions. In order to provide a test pattern for measuring reliability and a method of manufacturing the same, a test pattern for measuring reliability of a copper wiring according to the present invention includes a semiconductor substrate, a first interlayer insulating film formed on the semiconductor substrate, and a lower portion embedded in the first interlayer insulating film. A copper wiring, a second interlayer insulating film on the lower copper wiring and the first interlayer insulating film, an upper copper wiring embedded in the second interlayer insulating film and connected to the lower copper wiring through a via contact, and to cover the upper copper wiring; Formed and containing a protective film with a moisture window that allows moisture to enter during electromigration tests . |
| priorityDate | 2003-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.