http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050045380-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283 |
| filingDate | 2003-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8be2887cd320eb751ba304e784043334 |
| publicationDate | 2005-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050045380-A |
| titleOfInvention | Method of forming bit line contact plug in semiconductor devices |
| abstract | The present invention relates to a method of forming a bit line contact plug of a semiconductor device, and the idea of the present invention is to form a first insulating film on the entire surface of the resultant product on which the landing plug polysilicon film is formed, and pattern the first insulating film to form the landing plug below. Forming a contact hole exposing the polysilicon layer, forming a first barrier metal layer in the formed contact hole, forming a second barrier metal layer on the first barrier metal layer, and the second barrier metal Forming a metal layer on the layer, forming a second insulating film as a capping film over the entire surface of the resultant, and patterning a predetermined region of the resultant to form a bit line contact plug. According to the present invention, by forming the diffusion barrier of the bit line contact plug as a double layer to improve the surface roughness of the tungsten film deposited thereon to prevent defects in subsequent processes such as etching is performed to prevent the failure of the contact plug Can be. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113782491-A |
| priorityDate | 2003-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.