http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050045376-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f1cdac90c4272d2ed510122d7153738 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2003-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79040b4d545fc1c8e9f2758b9e72764e |
| publicationDate | 2005-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050045376-A |
| titleOfInvention | Method of forming metal line in semiconductor devices |
| abstract | The present invention relates to a method of forming a metal wiring of a semiconductor device, and the idea of the present invention is to form a via hole and a trench pattern exposing the first metal wiring and to form a copper ion raw material of Ag ions in the formed via hole and trench pattern Adding to the solution to perform an electroplating method to form a copper layer to form vias and second metal wirings. Therefore, by performing the electroplating method by adding a raw material of Ag ions to the copper ion solution, it is possible to prevent the formation of micro voids in the deposited copper layer, thereby improving the characteristics of the electroplating method. |
| priorityDate | 2003-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.