http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050044032-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36 |
| filingDate | 2003-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8a9c15467a2b0b02da44e1c6d28cbf0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9472f5190451658f96a45aafa17f1715 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d25d37b21687415094d1bcbc9f2e7fdc |
| publicationDate | 2005-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050044032-A |
| titleOfInvention | Flip-chip type light emitting device and method of manufacturing the same |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flip chip nitride light emitting device and a method of manufacturing the same. In the flip chip nitride light emitting device, a substrate, an n-type cladding layer, and an active layer p-type cladding layer are sequentially stacked on the p-type cladding layer. The formed ohmic contact layer and the reflective layer formed of the material which reflects light on the ohmic contact layer are provided. According to such a flip chip type nitride light emitting device and a manufacturing method, current-voltage characteristics can be improved and durability can be improved by applying an electrode structure that is stable to oxidation and has a low specific contact resistance. |
| priorityDate | 2003-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.