http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050041089-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate | 2003-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58914a0d126bc7081a64fbdfadbef60b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_adf588f4722551a091e2c2c4afe02d18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61158145a6887f8b1ceb45e6f041d014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc5a055f8ca03fb0417521688ee32af2 |
| publicationDate | 2005-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050041089-A |
| titleOfInvention | Capacitor for feram and method for fabrication of the same |
| abstract | SUMMARY OF THE INVENTION The present invention provides a capacitor of a ferroelectric memory device suitable for minimizing plasma damage of a ferroelectric film generated when etching an upper electrode, and a method of manufacturing the capacitor of the ferroelectric memory device of the present invention. Forming an interlayer insulating film, forming a lower electrode on the interlayer insulating film, forming a separation insulating film on the entire surface including the lower electrode, and planarizing the separation insulating film until the surface of the lower electrode is exposed; Forming a ferroelectric layer and a buffer layer on the lower electrode and the planarized isolation insulating layer, selectively etching the buffer layer to form a groove in which an upper electrode is to be formed, and forming an upper electrode on the entire surface including the groove Forming a metal film, and patterning the metal film to form The present invention includes the step, thereby forming an electrode has an effect that can be introduced into the buffer film below the upper electrode to prevent plasma damage to the ferroelectric film, which occurs during the etching process for producing the capacitor of the ferroelectric memory device. |
| priorityDate | 2003-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.