| abstract |
The present invention relates to a gallium nitride compound semiconductor, and more particularly, to a p-type electrode and a group III-V compound semiconductor to which the compound is applied. The p-electrode of the present invention is formed on the III-V nitride compound semiconductor layer, the first layer of zinc-based material containing a solute element in zinc; And stacked on top of the first layer {Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb , Al, ITO, ZnO} and a second layer made of at least one material selected from the group consisting of. Zinc-based p-type electrodes exhibit excellent electrical, optical and thermal properties. |