http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050035882-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
| filingDate | 2004-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b26639a2172ca2d111056f8db36b40f |
| publicationDate | 2005-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050035882-A |
| titleOfInvention | Method for etching chromium thin film and method for producing photomask |
| abstract | The present invention etches the thin film in a workpiece having a chromium-based thin film made of a material containing chromium, using a resist pattern as a mask, and for plasma excitation to a dry etching gas containing a halogen-containing gas and an oxygen-containing gas. Power is applied to excite the plasma, and the thin film is etched using the generated chemical species. The thin film is etched using a power lower than the power for plasma excitation where a density jump of plasma occurs as the power for plasma excitation. |
| priorityDate | 2003-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.