http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050032169-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5ad8562c578b061df7a2c3aee9d0e24 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-472 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-164 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2003-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3b560a75296239ece29c0b381dbf08a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8940f4fcaa32487f38c283054b098046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a1f9e512b170e7b7990f830f46768da http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_adb4cb0246434ed70a976903a245811a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ccd5a0e7c6d6c4ad821439a6418e494 |
| publicationDate | 2005-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050032169-A |
| titleOfInvention | Method for manufacturing thin film transistor |
| abstract | A method of manufacturing a thin film transistor is disclosed. According to the present invention, a gate electrode, a gate insulating film, and pentacin, which is an active layer, are sequentially stacked on a substrate, and then hydrogen plasma surface treatment is performed on the exposed pentacin, followed by formation of source / drain electrodes. Herein, pentacin, which is used as an organic active layer material of an organic thin film transistor, is an organic material having high conductivity, exhibits characteristics of a p-type semiconductor, and has a very high mobility when grown in a thin film form, and is used as an active layer of an organic thin film transistor. In the present invention, a hydrogen plasma treatment is performed on the patterned pentacin. As a result, the roughness of the pentacin surface, whose electrical properties depend on the grain size, is alleviated, which not only suppresses scattering and trapping, but also improves electrical properties by lowering the potential barrier to improve mobility. You can. In addition, the present invention is characterized in that it is applied to a flexible substrate. |
| priorityDate | 2003-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.