http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050031756-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f1cdac90c4272d2ed510122d7153738 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2003-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e072ffacb136bc37f5652bcf6dfb4f1 |
| publicationDate | 2005-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050031756-A |
| titleOfInvention | Method for manufacturing isolation of semiconductor device |
| abstract | The present invention relates to a method of manufacturing a device isolation layer of a semiconductor device for maintaining a uniform impurity distribution at the same depth of an active region so that the threshold voltage characteristics according to the gate width. Forming a trench having a predetermined depth in the silicon substrate on which the nitride film is deposited; forming a sidewall oxide film on the inner wall of the trench; depositing a first buried oxide film; and planarizing the first buried oxide film, and then forming a pad nitride film. Removing the pad nitride film and depositing a second buried oxide film on the resultant from which the pad nitride film is removed, thereby clipping a sidewall of a corner of the first buried oxide film by removing the second buried oxide film; Causing the boundary of the first buried oxide film to be an obtuse angle It is configured by. |
| priorityDate | 2003-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.