http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050029226-A

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filingDate 2003-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af711d558b6edb01318f0b187aa6beab
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publicationDate 2005-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20050029226-A
titleOfInvention Hafnium silicide target and method for preparation thereof
abstract A hafnium silicide target for forming a gate oxide film comprising HfSi 0.82-0.98 and having an oxygen content of 500 to 10,000 ppm.n n n For forming a gate oxide film by synthesizing a powder having a composition of HfSi 0.82-0.98 and pulverizing it to 100 mesh or less by hot pressing or hot hydrostatic pressing (HIP) at 1700 ° C to 2120 ° C and 150 to 2000 kgf / cm 2. Prepare a hafnium silicide target. It is most suitable for the formation of HfSiO film and HfSiON film which can be used as a high dielectric gate insulating film having the property of replacing the SiO 2 film and the SiON film, rich in embrittlement resistance, low particle generation and ignition in the target manufacturing process. It is to obtain a hafnium silicide target without the risk of explosion, and the like and a method for producing the same.
priorityDate 2002-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 26.