http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050025080-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K2323-021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133734 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13378 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1337 |
| filingDate | 2004-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65f475edba57c29d144d24aa4bece882 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_594840edf8e0117b2287f30afbd82e76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4544a78ec7291cec8b894632b76e8985 |
| publicationDate | 2005-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050025080-A |
| titleOfInvention | Inorganic alignment film and method for forming the same, substrate for electronic device, liquid crystal panel, and electronic equipment |
| abstract | The present invention provides an inorganic alignment film excellent in light resistance and capable of generating a pretilt angle, providing a substrate for an electronic device, a liquid crystal panel, and an electronic device having such an inorganic alignment film. It aims at providing the formation method of such an inorganic alignment film, The formation method of the inorganic alignment film of this invention is a method of forming the inorganic alignment film mainly consisting of an inorganic material on a base material, The surface which forms the inorganic alignment film of a base material. And a milling step of irradiating the ion beam and a film forming step of forming an inorganic alignment film on the substrate on which the ion beam is irradiated, from a direction inclined by a predetermined angle θ b with respect to the vertical direction of the surface. The predetermined angle θ b in the milling process is 2 ° or more. The acceleration voltage of an ion beam at the time of irradiating an ion beam in a milling process is 400-1400V. |
| priorityDate | 2003-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.