Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_069302aee0d7eee291cd1e0ffa662781 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02194 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28044 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4925 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28255 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
filingDate |
2004-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5155d8d10af65fcbacd0eb653774fc4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aff9defbc9188d0bc4f2d96faf9fe8d8 |
publicationDate |
2005-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20050021337-A |
titleOfInvention |
Semiconductor device and manufacturing method thereof |
abstract |
A SiGe film is formed on the high dielectric film because there is no void and excellent surface flatness.n n n A semiconductor device having a gate electrode including a SiGe film 10 on a silicon substrate 2 via a gate insulating film 6, wherein the gate insulating film 6 includes a base interface layer 6a and a base interface layer 6a. The gate electrode includes a high-k dielectric film 6b having a higher relative dielectric constant, and the gate electrode includes a seed Si film 8 formed on the high-k dielectric film 6b and a SiGe film 10 formed on the seed Si film 8. Include. The film thickness of the seed Si film 8 is 0.1 nm or more and less than 5 nm. |
priorityDate |
2003-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |