http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050019607-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdd7cfc6524104a710e8f3fe0c1b4538 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6675 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78672 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02672 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02686 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2003-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7d633be82bb9f87ad2f711df5e8fdb7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6294563e6b278de295fb987584934514 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0bb00db6c693a36d6ba1b9ef3caa207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_313c0119ee22aac46c4c90595dd5f13b |
| publicationDate | 2005-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050019607-A |
| titleOfInvention | Thin Film Transistor And Method For Manufacturing The Same |
| abstract | The present invention relates to a thin film transistor and a manufacturing method thereof, the manufacturing method comprising: a Ce deposition step of continuously depositing a Ce metal on a flexible plastic substrate in an argon gas atmosphere; CeO 2 deposited to form a CeO 2 by oxidizing the Ce metal surface by injecting oxygen into the metal and Ce; CeO 2 growth steps of the introduction of argon gas and oxygen on the CeO 2 layer grown CeO 2 layer by sputtering and; An amorphous silicon deposition step of depositing amorphous silicon on the CeO 2 layer by Inductive Coupled Plasma Chemical Vapor Deposition (ICPCVD); And a polysilicon crystallization step in which amorphous silicon is crystallized into polysilicon by irradiating an excimer laser to the amorphous silicon layer, characterized in that the thin film transistor manufactured by this manufacturing method is characterized in that the mechanical and chemical Due to the reliability of the properties, the quality of the product is improved, and there is an effect of producing a thin film transistor having excellent performance. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7572658-B2 |
| priorityDate | 2003-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.