| abstract |
A field emission display having a carbon nanotube emitter and a method of manufacturing the same are disclosed. According to the present invention, a gate stack formed around a CNT emitter covers an emitter electrode around the CNT emitter, a gate insulating film sequentially formed on the mask layer, a gate electrode, and a first silicon oxide film (SiO X ). And (X <2) and a focus gate electrode. The first silicon oxide film has a thickness of 2 µm or more, preferably 3 µm to 15 µm. In the process of manufacturing the first silicon oxide film and / or the gate insulating film, a flow rate of silane (SiH 4) is maintained at 50 sccm to 700 sccm, and a flow rate of nitric acid (N 2 O) is maintained at 700 sccm to 4,500 sccm. do. |