http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050015441-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2f94790cf5bf17ef5799ba79a953aa57 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2003-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc036c8620b6c3b29d0ce95b17f6202a |
| publicationDate | 2005-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050015441-A |
| titleOfInvention | Method for Deposition of Hafnium Oxide Thin Films |
| abstract | The present invention discloses a method of depositing a hafnium oxide film by reacting with a reaction gas such as oxygen or ozone with tetrakis alkoxy hafnium (Hf (OR) 4 ), preferably tetrakis t-butoxy hafnium as a source material.n n n Since the source material according to the present invention does not contain nitrogen atoms unlike the conventional materials, nitrogen impurities, which are a factor of leakage current, are not formed in the formed hafnium oxide film.n n n In addition, the source material has a higher reactivity with the reaction gas than the conventional material so that a hafnium oxide film having a desired thickness can be formed in a short time, which is effective in the efficiency and cost reduction of the semiconductor manufacturing process. |
| priorityDate | 2003-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.