http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050014156-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82 |
| filingDate | 2003-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55ceeb9f09c45422fae492d2827c44be |
| publicationDate | 2005-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050014156-A |
| titleOfInvention | Manufacturing method for semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and in particular, a hard mask layer overlapping a gate electrode is formed of a nitride film primarily, and after forming a landing plug, a portion of the hard mask layer of a nitride film is removed to form a nitride film. After reducing the mechanical stress of the gate oxide film, the removed site was filled with the oxide material and the subsequent process was performed. Therefore, the leakage current of the device is reduced, thereby improving the refresh characteristics and preventing deterioration of the oxide film due to stress. And there is an advantage that can improve the reliability of the device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106409764-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100829606-B1 |
| priorityDate | 2003-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.