Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d680cde077fa4434553a3db36cdfeed0 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E05B49-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E05B9-08 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0445 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0749 |
filingDate |
2004-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f286b75830b3c5e79bb13df479371d19 |
publicationDate |
2005-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20050013063-A |
titleOfInvention |
Method of manufacturing absorber layers for solar cell |
abstract |
The present invention relates to a method for manufacturing a CuInSe 2 and CuIn 1-x Ga x Se 2 thin film used as a solar cell absorbing layer to have a structure close to the chemical equivalent ratio.n n n The present invention forms an InSe thin film by organometallic chemical vapor deposition using a [Me 2 In— (μSeMe) 2 ] precursor on a substrate, and an organometallic chemistry using (hfac) Cu (DMB) precursor on the InSe thin film. after the formation of the Cu 2 Se thin film by vapor deposition to prepare a CuInSe 2 thin film by metal organic chemical vapor deposition method using [Me 2 In- (μSeMe) 2 ] precursor on the Cu 2 Se thin Film. Furthermore, a CuIn 1-x Ga x Se 2 thin film is formed on the CuInSe 2 thin film by an organometallic chemical vapor deposition method using a [Me 2 Ga— (μSeMe) 2 ] precursor. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101134568-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8084295-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008111738-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7811633-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8852992-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100857227-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100853197-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7851791-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103165696-A |
priorityDate |
2003-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |