http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050013063-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d680cde077fa4434553a3db36cdfeed0
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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E05B49-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E05B9-08
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0445
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0749
filingDate 2004-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f286b75830b3c5e79bb13df479371d19
publicationDate 2005-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20050013063-A
titleOfInvention Method of manufacturing absorber layers for solar cell
abstract The present invention relates to a method for manufacturing a CuInSe 2 and CuIn 1-x Ga x Se 2 thin film used as a solar cell absorbing layer to have a structure close to the chemical equivalent ratio.n n n The present invention forms an InSe thin film by organometallic chemical vapor deposition using a [Me 2 In— (μSeMe) 2 ] precursor on a substrate, and an organometallic chemistry using (hfac) Cu (DMB) precursor on the InSe thin film. after the formation of the Cu 2 Se thin film by vapor deposition to prepare a CuInSe 2 thin film by metal organic chemical vapor deposition method using [Me 2 In- (μSeMe) 2 ] precursor on the Cu 2 Se thin Film. Furthermore, a CuIn 1-x Ga x Se 2 thin film is formed on the CuInSe 2 thin film by an organometallic chemical vapor deposition method using a [Me 2 Ga— (μSeMe) 2 ] precursor.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101134568-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8084295-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008111738-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7811633-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8852992-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100857227-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100853197-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7851791-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103165696-A
priorityDate 2003-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.