| abstract |
An ion implantation device and a method of manufacturing a semiconductor device are described, and ionized boron hydride molecular clusters are implanted to form a P-type transistor structure. For example, in the fabrication of complementary metal oxide semiconductor (CMOS) devices, clusters are implanted to provide P-type doping for the source and drain structures and polygates, and this doping step is critical for forming PMOS transistors. Molecular cluster ions have the formulas B n H x + and B n H x − , where 10 ≦ n ≦ 100 and 0 ≦ x ≦ n + 4. |