http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050009574-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f1cdac90c4272d2ed510122d7153738 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76294 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2003-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_954d58471b83b9c5da8ee463149eb246 |
| publicationDate | 2005-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050009574-A |
| titleOfInvention | Method for forming a trench in semiconductor device |
| abstract | The present invention relates to a method for forming a trench in a semiconductor device, wherein a pad oxide film and a pad nitride film are sequentially patterned, a trench is formed by performing an etching process using the pad nitride film as an etching mask, and a selective epitaxial growth (SEG). A silicon oxide film is formed on the inner wall of the trench to have the same thickness irrespective of the pattern size of the trench, so that a top corner is formed uniformly regardless of the trench pattern size. A method of forming a trench in a semiconductor device in which a double slope is not generated in a trench inner wall is disclosed. |
| priorityDate | 2003-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.