http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050004674-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f1cdac90c4272d2ed510122d7153738 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate | 2003-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75e0f9866811cb15e6592a450e02d9fd |
| publicationDate | 2005-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050004674-A |
| titleOfInvention | Transistor in a semiconductor device and a method of manufacturing the same |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transistor of a semiconductor device and a method of manufacturing the same, wherein the gate insulating film is formed into a laminated structure of a nitride-based insulating film and a high dielectric insulating film containing hafnium or zirconium, thereby further reducing the electrical thickness of the gate oxide film. The leakage current through the gate insulating film can be reduced, and in the case of the nMOS transistor, the reliability of the device is prevented from being degraded by the hot carrier flowing into the gate oxide film.In the case of the pMOS transistor, impurities injected into the gate are transferred to the channel region. Disclosed are a transistor of a semiconductor device and a method of manufacturing the same that can prevent diffusion. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100920553-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100754012-B1 |
| priorityDate | 2003-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.