http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050003061-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
filingDate | 2003-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e93277d0536cc1fdc3a0671d2f7efcd1 |
publicationDate | 2005-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20050003061-A |
titleOfInvention | Fabricating method for trench isoaltion layer using bottom anti reflection coating |
abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of forming a trench isolation layer that can fill a trench having a high aspect ratio without a void by using BARC. According to an aspect of the present invention, there is provided a method of forming a trench isolation layer for defining an active region and a field region, the method comprising: forming a pad nitride film on a substrate and forming a trench in the substrate using the same; Forming a first HDP oxide film on the entire structure having a thickness not filling the trench; Exposing the first HDP oxide layer formed on the active region and coating the first structure of the BARC having a thickness that covers the first HDP oxide layer formed inside the trench; Removing only the first HDP oxide film formed on the active region; Removing the BARC; Depositing a second HDP oxide film over the entire structure; And planarizing the surface by performing chemical mechanical polishing until the pad nitride film is exposed. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100714038-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7763524-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100841050-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100746223-B1 |
priorityDate | 2003-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 17.