http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050003061-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
filingDate 2003-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e93277d0536cc1fdc3a0671d2f7efcd1
publicationDate 2005-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20050003061-A
titleOfInvention Fabricating method for trench isoaltion layer using bottom anti reflection coating
abstract BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of forming a trench isolation layer that can fill a trench having a high aspect ratio without a void by using BARC. According to an aspect of the present invention, there is provided a method of forming a trench isolation layer for defining an active region and a field region, the method comprising: forming a pad nitride film on a substrate and forming a trench in the substrate using the same; Forming a first HDP oxide film on the entire structure having a thickness not filling the trench; Exposing the first HDP oxide layer formed on the active region and coating the first structure of the BARC having a thickness that covers the first HDP oxide layer formed inside the trench; Removing only the first HDP oxide film formed on the active region; Removing the BARC; Depositing a second HDP oxide film over the entire structure; And planarizing the surface by performing chemical mechanical polishing until the pad nitride film is exposed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100714038-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7763524-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100841050-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100746223-B1
priorityDate 2003-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069

Total number of triples: 17.