http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050002528-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2003-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecd6312cbd5cbaf181cc19177b41ca6b |
| publicationDate | 2005-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050002528-A |
| titleOfInvention | Method for forming element isolation film of semiconductor device |
| abstract | The present invention discloses a device isolation film forming method of a semiconductor device. The disclosed invention includes forming a pad oxide film and a pad nitride film on a semiconductor substrate; Over-etching the pad nitride film, the pad oxide film, and the semiconductor substrate to form a trench in the semiconductor substrate; Forming a sidewall oxide film on sidewalls of the trench; Forming a linear nitride film on an upper surface of the entire structure including the trench; And forming a spacer on the sidewalls of the trench and the pad nitride layer by removing the linear nitride layer portions positioned on the pad nitride layer upper surface and the trench bottom surface. This is to prevent the occurrence of process defects due to deterioration of mechanical properties according to the application. |
| priorityDate | 2003-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.