http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050002493-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-54426 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F9-708 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-544 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2003-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88cd34a0477f0e4e5f534d34a67123c7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_281181b931d7cc68da2b02e28436f9d5 |
| publicationDate | 2005-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050002493-A |
| titleOfInvention | Method for forming alignment key of semiconductor device |
| abstract | The present invention discloses a method for forming an alignment key of a semiconductor device for forming an alignment key to be used in a gate process. The disclosed method includes sequentially forming a pad oxide film and a pad nitride film on a silicon substrate having a cell region and a key forming region, and sequentially etching the pad nitride film, the pad oxide film and the substrate to activate the key forming region of the substrate. Forming a trench having a width wider than that of the region, performing a thermal oxidation process on the substrate resultant to form a sidewall oxide film on the sidewalls of the trench, and filling the buried oxide film on the entire surface of the substrate to fill the trench. Depositing the buried oxide film until the pad nitride film is exposed to cause dishing on the buried oxide film surface in the trench by designing the width of the field region to be wider than the width of the active region; Removing the pad oxide film, and cleaning the substrate resultant to remove the pad oxide film. The additional loss of the buried oxide film and a step of to take place. According to the present invention, by designing the width of the field region in the key formation region relatively larger than the width of the active region, dishing occurs in the field region in the CMP process to form a step between the active region and the field region. As a result, an additional process for forming a step between the active region and the field region may be omitted, thereby increasing the process and the cost. |
| priorityDate | 2003-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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