http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050002375-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
filingDate 2003-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fcb0c7b1bd416ec1af234925854b7f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_489702b17bec8f7b871312212212f832
publicationDate 2005-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20050002375-A
titleOfInvention Method for fabricating a semiconductor device
abstract A semiconductor device manufacturing method according to the present invention includes a first process of forming a gate line, and sequentially depositing a side wall nitride film and an isolation BPSG film (Boro Phospho Silicate Glass Film), and BPSG. A linear perfluoro-compound (PFC) having a double unsaturated bond using a second process for patterning using a photoresist mask formed on the film and a pattern formed through the second process Since the compound C 3 F 8 as a main etchant gas (main etchant gas), and comprises a third step of performing a dry etching using O 2 and Ar gas, high selectivity dry An etching process may be performed to prevent self aligned contact (SAC) failure and to prevent Si sub damage.
priorityDate 2003-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069

Total number of triples: 16.