http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050002375-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
filingDate | 2003-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fcb0c7b1bd416ec1af234925854b7f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_489702b17bec8f7b871312212212f832 |
publicationDate | 2005-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20050002375-A |
titleOfInvention | Method for fabricating a semiconductor device |
abstract | A semiconductor device manufacturing method according to the present invention includes a first process of forming a gate line, and sequentially depositing a side wall nitride film and an isolation BPSG film (Boro Phospho Silicate Glass Film), and BPSG. A linear perfluoro-compound (PFC) having a double unsaturated bond using a second process for patterning using a photoresist mask formed on the film and a pattern formed through the second process Since the compound C 3 F 8 as a main etchant gas (main etchant gas), and comprises a third step of performing a dry etching using O 2 and Ar gas, high selectivity dry An etching process may be performed to prevent self aligned contact (SAC) failure and to prevent Si sub damage. |
priorityDate | 2003-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 16.