http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050002066-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2003-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f323990ae6a6105016defb512b2bf05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e551b94a4b3c565210d8a0ade52ef7e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2a909224d06ff498a11939f3486b7a4 |
| publicationDate | 2005-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050002066-A |
| titleOfInvention | Method of forming metal interconnection line for semiconductor device |
| abstract | The present invention provides a method for forming a semiconductor device wiring that can obtain excellent wiring reliability while uniformly forming copper wiring by a dual damascene process regardless of pattern density and size.n n n The present invention includes forming an insulating film on a semiconductor substrate; Patterning the insulating film by a dual damascene process to form a wiring-shaped hole exposing a portion of the substrate; Sequentially depositing a diffusion barrier film and a copper seed layer on the holes and the insulating film surfaces; Applying a photoresist film on the entire surface of the substrate to be embedded in the hole; Partially etching the photoresist film to expose the seed layer; Removing the seed layer and the diffusion barrier film by chemical mechanical polishing so that the surface of the insulating film is exposed; Removing the photoresist film to expose the seed layer inside the hole; And forming a copper wiring by plating a metal layer on the seed layer so as to be filled only in the holes. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100752174-B1 |
| priorityDate | 2003-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID418354341 |
Total number of triples: 19.