| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-095 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate |
2004-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3aa197a0faee499992f0da36115aa856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23cfb055bf88286becaa503a8173bab7 |
| publicationDate |
2004-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20040111087-A |
| titleOfInvention |
Resist Lower Layer Film Material and Method for Forming a Pattern |
| abstract |
The present invention functions as a resist underlayer film material for a multilayer resist process, in particular for a two-layer resist process, particularly as an antireflection film excellent for short wavelength exposure, that is, has high transparency, has an optimum n value and k value, A resist underlayer film material having excellent etching resistance in processing and a method of forming a pattern on a substrate by lithography using the same are provided.n n n The resist underlayer film material of the present invention is a resist underlayer film material of a multilayer resist film used in lithography, and is characterized by including a polymer having at least a repeating unit represented by the following formula (1).n n n <Formula 1> |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100938065-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101425234-B1 |
| priorityDate |
2003-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |