http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040107387-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_069302aee0d7eee291cd1e0ffa662781 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2004-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30172ff7879ff5b2404908e9a55f7295 |
| publicationDate | 2004-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040107387-A |
| titleOfInvention | Method for improving quality of nitride film and method for manufacturing semiconductor device |
| abstract | An object of the present invention is to reduce the chlorine content in the nitride film without increasing the film formation temperature.n n n The nitride film 12 is formed on the silicon substrate 11 by LPCVD using chlorine-containing gas such as Si 2 Cl 6 and NH 3 at a film formation temperature of 450 ° C. A plasma containing hydrogen radicals 14 is generated at a temperature of 400 ° C., and the nitride film 12 is exposed in the plasma. Hydrogen radicals 14 introduced into the nitride film 12 combine with chlorine 13 to produce hydrogen chloride 15, and the hydrogen chloride 15 is separated from the nitride film 12. |
| priorityDate | 2003-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.