| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b3310ea86f3c492f6c09d7be6592866d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2003-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4b6b1e6d991cbc23291134a00467095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eeef1c65fa60bbb97d838fe3d3101844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_471382d09e66f4639017b3fa620709a4 |
| publicationDate |
2004-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20040106597-A |
| titleOfInvention |
Method of producing a gallium nitride singlecrystal substrate |
| abstract |
The present invention relates to a method of manufacturing a gallium nitride (GaN) single crystal substrate, comprising the steps of forming a gallium nitride single crystal bulk on the upper surface of the gallium nitride single crystal growth substrate, the growth substrate is divided into a plurality of It provides a gallium nitride single crystal substrate manufacturing method comprising the step of forming a groove having a predetermined width, and separating the gallium nitride single crystal bulk from the growth substrate by irradiating a laser on the lower surface of the growth substrate.n n n According to the method of manufacturing a gallium nitride single crystal substrate of the present invention, when a gallium nitride single crystal substrate having a large size of 2 inches or more is formed by forming and patterning a groove to divide the growth substrate before the laser irradiation step for separating the growth substrate. The GaN single crystal substrate can be manufactured by minimizing cracks due to lattice mismatch and thermal expansion coefficient. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018124366-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180079600-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011139004-A1 |
| priorityDate |
2003-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |