| abstract |
The present invention provides a material of an antireflection film having a high etching selectivity with respect to a resist, that is, a high etching rate with respect to a resist, and a pattern formation method for forming an antireflection film layer on a substrate using the antireflection film material, and the reflection There is also provided a pattern formation method using the prevention film as a hard mask for substrate processing.n n n The present invention provides an antireflection silicon comprising an organic group having a carbon-oxygen single bond and / or a carbon-oxygen double bond, a light absorber, and a silicon atom whose terminal is Si-OH and / or Si-OR. Provide resin. Moreover, the antireflection film material containing the (A) silicone resin for antireflection film, (B) organic solvent, and (C) acid generator is provided. |