http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040103756-A

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filingDate 2003-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2004-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20040103756-A
titleOfInvention Electrolytic polishing liquid, electrolytic polishing method and method for fabricating semiconductor device
abstract The conductivity is improved without causing cohesive precipitation of the abrasive grains. In addition, good planarization is realized without causing defects in the metal film or wiring to be polished. In the electropolishing liquid E, the electropolishing method of performing a planarization by sliding the polishing pad 15 on the surface of the metal film while oxidizing the surface of the metal film to be polished by electrolytic action, wherein the electrolytic polishing liquid E is at least Abrasive abrasive grains, and an electrolyte for maintaining the charged state of the abrasive grains. Since the electropolishing liquid which shows high electroconductivity is used, while a high electrolytic electric current value is obtained, an interpolar distance can be enlarged. Moreover, in the electrolytic polishing method of the present invention, since the electrolytic polishing liquid having a good dispersion state of abrasive grains is used, defects such as abrasive grains and scratches do not occur after polishing.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220053143-A
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