http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040102230-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-249969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-21 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-203 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-00 |
| filingDate | 1998-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040102230-A |
| titleOfInvention | Low defect density, ideal oxygen precipitating silicon |
| abstract | The present invention generally relates to two major planes of the front and rear surfaces of a parallel wafer, a central plane between the front surface and the back surface, and a circumferential edge connecting the front and back surfaces. It is for a single crystal silicon wafer comprising a circumferential edge). The wafer comprises a region of the wafer up to a distance D 1 measured at least about 10 micrometers in the direction of the center plane from the front surface and a exposed zone comprising interstitial oxygen do. The wafer is also characterized in that the concentration of interstitial oxygen in the exposed zone at a distance corresponding to half of D 1 is at least about 75% of the maximum interstitial oxygen concentration in the exposed zone. In one embodiment the wafer further has an inherent point defect in which bacony dominates and is substantially free of agglomerated intrinsic point defects, including a central axis or having a width of at least about 15 mm. It characterized in that it comprises an axisymmetric region (90). In another embodiment, the wafer is substantially free of aggregated silicon self-interstability intrinsic point defects and extends radially inwardly from the circumferential edge of the wafer and is measured radially from the circumferential edge toward the central axis. An axisymmetric region 60 of self-interstitial dominant material that is at least about 40% of the wafer radius length. |
| priorityDate | 1997-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.