http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040096871-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22
filingDate 2004-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e61e424b412de5a8e83582e8a07f6b07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f616b3f714f6d4c0e1f8d5a806107b0
publicationDate 2004-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20040096871-A
titleOfInvention Silicon-Based LED and Fabricating Method Thereof
abstract The present invention relates to a silicon light emitting device and a method of manufacturing the same that can improve the luminous efficiency.n n n The silicon light emitting device according to the present invention includes a silicon substrate having irregularities formed on an upper surface of a light emitting region, a silicon emitting layer formed on the uneven silicon substrate to generate light, and a silicon emitting layer formed on the silicon emitting layer. A first metal layer for injecting electrons, and a second metal layer formed on the back of the silicon substrate to inject holes into the silicon substrate.n n n With such a configuration, the silicon light emitting device and the method of manufacturing the same according to the present invention can increase the area between the light emitting layer and the metal layer by forming irregularities on the surface of the silicon substrate, thereby improving luminous efficiency.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008060053-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7772587-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007066854-A1
priorityDate 2004-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 20.