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publicationDate 2004-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20040092545-A
titleOfInvention Method for manufacturing a metal layer and method for manufacturing semiconductor device using the same
abstract A method of manufacturing a metal film and a method of manufacturing a semiconductor device using the same are disclosed. A preliminary metal film is formed on the semiconductor substrate. Subsequently, a gas containing chlorine as a main component is introduced into the preliminary metal film to form a metal film by etching the surface of the preliminary metal film so that minute unevenness on the surface of the metal film is reduced.
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