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filingDate 2003-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee22c845f6af6a005c87fa813d79bf4c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84a2d886f59f3557ddcd005acbe0906b
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publicationDate 2004-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20040088937-A
titleOfInvention Precursor for preparing a copper thin-film in the chemical vapor deposition method
abstract The present invention relates to a copper divalent precursor represented by the following formula (1) which can be usefully used in producing a copper thin film by chemical vapor deposition. More specifically, an alkyl group may be introduced at an alpha position of a beta-diketone or a beta-ketoester ligand which does not contain a fluorine group, and a non-covalent electron pair may be provided to the central copper divalent. A copper divalent precursor characterized by having a structure in which an ethylenediamine group is coordinated with a Lewis base.n n n n n n n n n n (Wherein, R and R 1 is a C1-C6 alkyl group or benzyl group, A is an alkyl group or an alkoxy group, L is an ethylenediamine group (R 1 R 2 NCH 2 CH 2 NR 3 R 4 ).)
priorityDate 2003-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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