| abstract |
The present invention relates to a method for manufacturing a single crystal wire, wherein at least one or more metals of the group consisting of gold, copper, silver, aluminum, and nickel are accommodated in a growth crucible, and the metal contained in the growth crucible is heated and melted to form a crystal structure. A method of manufacturing a single crystal wire in which a single crystal is grown using a seed seed crystal as a seed and grown by a Czochralski method, and the grown single crystal is subjected to a cutting process using electric discharge machining is formed. Accordingly, the seed crystals are used to cultivate the metal single crystals, and then formed into circular pieces by electric discharge machining. The pieces are used to form single crystal wires using wire cut using electric discharge machining, and the single crystal wires are formed. Has the advantage of being used as a wire inside a high quality cable that connects audio and video equipment. |