http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040088168-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E04F15-02476
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32
filingDate 2003-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fd72344004c85e89a41191418564c5b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c3f09754b71619a7636c02bedfde90c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60ea28a01d4e427f5610acd2c434d8f1
publicationDate 2004-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20040088168-A
titleOfInvention Cleaning Solution for Photoresist and Method for Forming Pattern Using the same
abstract The present invention relates to a photoresist cleaning liquid composition used to clean a semiconductor substrate in the final stage of development when forming a photoresist pattern, and a pattern forming method using the same. The cleaning liquid composition of the present invention contains water as a main component, It includes a surfactant and an alcohol compound, which is a phosphate ester-alcoholamine salt represented by Formula 1, and has a lower surface tension than distilled water conventionally used as a cleaning liquid, thereby improving pattern collapse and stabilizing a pattern forming process.n n n [Formula 1]n n n n n n n n Wheren n n R, x, y, z and n are as described in the specification.
priorityDate 2003-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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