http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040083079-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F290-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 1999-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040083079-A |
| titleOfInvention | Photoresists and Processes for Microlithography |
| abstract | The present invention discloses positive photoresists and related methods for microlithography in ultraviolet (UV) and magnetic radiation. The photoresist comprises (a) a branched polymer containing protected acid groups and (b) one or more photoacid generators. The photoresist has high transparency, good development properties, high plasma etch resistance, and other desirable properties over UV as a whole, and is useful for microlithography in near, far and extreme UV, especially at wavelengths below or equal to 365 nm. |
| priorityDate | 1998-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 125.