http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040081344-A

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filingDate 2004-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3159c66351aefbb774281c302f9cff33
publicationDate 2004-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20040081344-A
titleOfInvention Thin film transistor and method for manufacturing same
abstract The present invention is to form a hydrogen supply layer in a position capable of shortening the diffusion distance of hydrogen without increasing the photolithography step, the thin film transistor according to the present invention is a polycrystalline silicon at a position between the gate insulating film and the gate electrode A hydrogen supply layer for diffusing hydrogen is formed at the dangling bond at the interface between the thin film and the gate insulating film. This configuration shortens the diffusion distance of hydrogen during the hydrogenation, and the hydrogenation can be sufficiently performed without taking time for heat treatment.
priorityDate 2003-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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