http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040076113-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2003-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58b3aa07d1a456e222b7786aadfd078f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c9f0c3c309bbf1d7df5e8aa18eb5695 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9271fc2ee38089fe6a735b801dcc1469 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1440fd6ff5d8419fdcae93208724f8e8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_499f88a13a1bcf4efc216f7636ac90be http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_747be0852a254650fa1a81eec490939b |
| publicationDate | 2004-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040076113-A |
| titleOfInvention | Method of forming a semiconductor substrate |
| abstract | A method of forming a semiconductor substrate is provided. According to this method, at least a pair of sacrificial films and a silicon layer are sequentially formed on a semiconductor substrate. A predetermined depth of the at least one pair of sacrificial film, the silicon layer, and the semiconductor substrate is etched using the first mask pattern to form a semiconductor substrate having an uneven structure, and at least one pair of the sacrificial film pattern and the silicon layer pattern. A semiconductor substrate having a line-shaped protrusion including at least one sacrificial layer pattern by growing an epitaxial layer on a side and a bottom of the semiconductor substrate having an uneven structure and at least at least one pair of the sacrificial layer pattern and the silicon layer pattern. To form. A sacrificial oxide film is formed to fill between the line-shaped protrusions. The semiconductor substrate is patterned using a second mask pattern having a direction crossing the first mask pattern to expose a bottom surface of the uneven semiconductor substrate and to form a semiconductor substrate having island-like protrusions having at least one sacrificial layer pattern. . The at least one sacrificial layer pattern is removed to form a semiconductor substrate having island-shaped protrusions having holes. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109983564-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109983564-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100880106-B1 |
| priorityDate | 2003-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.