| abstract |
By applying epitaxially grown C49-TiSi 2 films with low interfacial energy to the extent that phase changes do not occur in subsequent high temperature thermal processes on silicon, the agglomeration and grooving of TiSi 2 films are prevented, Disclosed are a semiconductor device suitable for reducing contact resistance and leakage current, and a manufacturing method thereof. The epitaxially grown C49-TiSi 2 film according to the present invention is applicable to a salicide process, a contact process, and the like, and may be formed by physical vapor deposition, chemical vapor deposition, atomic layer deposition, or the like. |