http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040070483-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2003-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5d9253ec3573fc90f8ba0ce420c7dbd |
| publicationDate | 2004-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040070483-A |
| titleOfInvention | Method of forming a gate in a semiconductor device |
| abstract | Forming a gate oxide film on the semiconductor substrate; Forming a polysilicon layer on the gate oxide layer; Removing a portion of the polysilicon layer and the gate oxide film by an etching process using a reaction gas containing oxygen to form a gate electrode; Weakly removing a reaction product of oxygen and polysilicon at the sidewall of the gate oxide film; Disclosed is a method of forming a gate of a semiconductor device, the method including forming a nitride film on a sidewall of the gate oxide film by performing a plasma nitridation process. |
| priorityDate | 2003-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.